Collaborative Effect between Additives and Current in TSV Via Filling Process
Deep via filling is one of key technologies of 3D packaging. Vias are commonly filled by electroplating. Since cupric transportation in vias is limited by diffusion, Current density is one of the most influential factors for copper plating in vias. We investigated new additive of accelerator, suppressor and leveler. Simulation of the competitive adsorption ability of accelerator and suppressor at different potential was studied. It was found that accelerator has more powerful adsorption ability than suppressor at high potential. Suppressor would form a passivating layer at the surface in the electroplating process, but the layer is easily disrupted by accelerator at high potential. We also investigated vias filling at different current density to prove our assumption. 0.4ASD was the best condition which got a fulfilled via without voids or seams. Conformal growth performance was attained at low current density and large current density would sealed the opening quickly, leaving seam at the bottom.
Kaihe Zou Huiqin Ling Qi Li Haiyong Cao Xianxian Yu Ming Li Dali Mao
School of Materials Science and Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Shan Shanghai Sinyang Semiconductor Materials Co., Ltd, 1268 Wenhe Road, Shanghai, China
国际会议
北京
英文
103-106
2009-08-10（万方平台首次上网日期，不代表论文的发表时间）