Modeling of Manufacturing Processes of High Power Light Emitting Diodes: Wire Bonding Process
In this paper, the wire bonding process of high power light emitting diodes (LED), which was simplified to consist of impact and vibration stages, was investigated by using a nonlinear finite element method. Parametric studies were carried out to examine the effects of the ultrasonic vibration amplitude, the friction coefficient between the free air ball (FAB) and bond pad, the incline of LED chip on stress and strain distribution in the bond pad and ohmic contact layer of both p-type and n-type electrode structure. This numerical simulation work may provide guidelines for the wire bonding process virtual window development of high power lighting emitting diodes package.
Zhaohui Chen Yong Liu Sheng Liu
Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai, P. Wuhan National Laboratory for OptoelectronicsHuazhong University of Science & Technology, Wuhan, P. Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai, P.
国际会议
北京
英文
187-192
2009-08-10(万方平台首次上网日期,不代表论文的发表时间)