First-Principles Based Modeling for Influence of Epitazy and Packaging Induced Strains on Emission Properties of Ⅲ-nitrides LED Chips
Undesired residual strain always exists in the epitaxial film inevitably as a result of lattice mismatch and thermal expansion mismatch between the substrate and the epitaxial film. The strain affects crystalline quality as well as optical and electrical properties of LED epitaxial film. In this paper, we report on the effects of strain on the emission properties of III-nitrides based LEDs grown on various substrates. As results, the band-gap energy of Ⅲ-nitrides shows blue shift with increasing compressive strain and increases in tensile strain results in a decrease of band-gap energy. A linear relation of the band-gap of Ⅲ-nitride with the biaxial strain is observed. In addition, Ⅲ-nitrides materials with larger bandgap energy show a larger shift of emission energy, which means purple and ultraviolet LEDs will be more non-uniform than blue and red LEDs under the same strain states.
Han Yan Zhiyin Gan Xiaohui Song Zhaohui Chen Jingping Xu Sheng Liu
Department of Electronic of Science and Technology, Huazhong University of Science & Technology Wuha Wuhan National Laboratory for Optoelectronics School of Mechanical Science and Engineering, Huazhong Wuhan National Laboratory for Optoelectronics Department of Electronic of Science and Technology, Huazhong University of Science & Technology Department of Electronic of Science and Technology, Huazhong University of Science & Technology Wuha
国际会议
北京
英文
429-432
2009-08-10（万方平台首次上网日期，不代表论文的发表时间）