Low-temperature Bonding of Laser Diode Chips on Si Substrates with Ozygen and Hydrogen Atmospheric-pressure Plasma Activation
Surface activated bonding (SAB) method with atmospheric-pressure plasma treatment is an effective approach to develop low cost, low damage, and low temperature bonding technology. In this research, not only conventional low-pressure plasma treatment (Ar RF plasma) but also atmospheric-pressure plasma treatment (Ar+O2, Ar+H2) was investigated for low-temperature Au-Au surfaceactivated bonding (150℃). In the case of Au thin film to Au thin film bonding, enough bonding strength was not obtained with Ar+O2 atmospheric-pressure plasma treatment due to Au2O3 formed on Au surface. However, by using Au microbump (diameter at the top: 5 μm, height: 2 μm, and pitch: 10 μm), strong bonding strength was obtained with all these plasmas. Semiconductor laser diodes chips were successfully bonded to Si substrates wiht Au microbumps at low temperature (150℃) in ambient air using Ar+H2 atmospheric-pressure plasma treatment.
Ryo Takigawa Eiji Higurashi Tadatomo Suga Renshi Sawada
Department of Precision Engineering, School of Engineering, The University of Tokyo, Tokyo 113-8656, Department of Precision Engineering, School of Engineering, The University of Tokyo, Tokyo 113-8656, Department of Mechanical Engineering, Kyushu University, Fukuoka 819-0395, Japan.
国际会议
北京
英文
475-477
2009-08-10（万方平台首次上网日期，不代表论文的发表时间）