Integrated Inductors on Silicon and Planarized Ceramic Substrates
Passive integration is one of the important issues for system miniaturization in wireless applications on different substrate. Integrated inductors were designed and realized on both silicon and planarized ceramic substrate. Planarized ceramic substrate has the advantages such as lower cost than polished ceramic substrate and has other advantages such as lower dielectric constant, higher bulk resistance than silicon substrate. The L values of fabricated inductors on planarized ceramic substrate are about 1nH, the peak values of Q are about 30 and the corresponding frequency is about 10GHz. By contrast, for the Inductors fabricated on silicon substrate with the same process, the L values is more or less the same with those on ceramic substrate, the Q peak value is about 7 lower, the corresponding frequency is about 5GHz.
Jianwei Wang Jian Cai Xinyu Dou Shuidi Wang
National Laboratory of Information Science and Technology in Tsinghua University, Beijing, China Ins National Laboratory of Information Science and Technology in Tsinghua University, Beijing, China Ins
国际会议
北京
英文
504-507
2009-08-10（万方平台首次上网日期，不代表论文的发表时间）