Low-temperature Wafer Bonding Using Gold Layers

摘要：

The bonding possibility of gold layers was investigated at 25~200℃ in wafer scale using a surface activated bonding (SAB) method. The interconnections of Si-to-Si and Si-to-PZT substrates were confirmed using different thickness of gold layers. The influence of surface roughness, vacuum condition, wafer temperature and rolling was studied. The bonded samples were observed using a scan acoustic microscope (SAM). The bonding energy was measured using razor blade test and the bonding strength was evaluated using tensile test. The microstructures on interfaces and the fractured surfaces after tensile test were observed using a scanning electron microscope (SEM) and an optical microscope. The interface of the bonded wafers was nearly void free. The gold layers were effective on metal diffusion and plastic deformation and therefore enlarge the bonded areas.

作者: Ying-Hui Wang Jian Lu Tadatomo Suga

作者单位: Department of Precision Engineering, School of Engineering, the University of TokyoHongo 7-3-1, Bunkyo-ku, Tokyo 113-8656, Japan

会议类型: 国际会议

会议名称: 2009 International Conference on Electronic Packaging Technology & High Density Packaging(2009 电子封装技术与高密度集成技术国际会议)

会议地点: 北京

会议语种:英文

页码: 516-519

在线出版日期: 2009-08-10（万方平台首次上网日期，不代表论文的发表时间）