A Warpage of Wafer Level Bonding for CIS (CMOS Image Sensor) Device Using Polymer Adhesive
The polymer adhesive bonding technology using waferlevel technology was investigated to adhere silicon to glass wafer and it analyzed warpage caused in cemented wafer and the degree of intensity. We executed the wafer adhesion depending on temperature (130℃, 190℃), the pressure (5000N, 8000N), the height of the adhesive layer (10μm, 20μm) and the adhesive time (process time, the time for temperature rising) of each of the silicon and glass wafer. The warpage was measured using three-dimensional measuring equipment and the results were caused by the differences of CTE and the physical stress. It was also confirmed that the more the temperature of Si wafer, adhesive pressure and adhesive layer was lowered in order to improve the warpage results, the more warpage decreased, and that the adhesive time and temperature differences of glass wafer were relatively insufficient factors. To judge the degree of wafer adhesion, the shear intensity was tested and it showed that the higher the adhesive temperature of glass wafer was, the more degree of shear intensity it showed, and that the other conditions showed little effects. Also, in the center of the adhesive wafer where the warpage occurred showed that the more it was getting to the edge, the more shear intensity decreased, and that the stress related with the occurrence of warpage also had effects on the state of adhesion.
Jae-Hyun Park Ji-Young Lee Min-Kyo Cho Jae-June Kim Gu-Sung Kim
Kangnam University, Yongin 446-702, Korea EPWorks Co.,Ltd., ESIP Lab. Gyeonggi 464-070, Korea
国际会议
北京
英文
577-580
2009-08-10（万方平台首次上网日期，不代表论文的发表时间）