The Influence of Silicon Content on the Thermal Conductivity of Al-Si/Diamond Composites
Diamond reinforced Al-based composites with excellent comprehensive properties (i.e., high thermal conductivity, flexible coefficient of thermal expansion) are showing great potential for high power density packaging. In this study, effect of the Silicon addition on the thermal conductivity and interfacial characteristic of the Al-Si/diamond composites are investigated. Al-Si alloy containing 1.0, 2.0, 3.0, 4.5, 7.0, 10.0, 14.0, 20.0 wt.％ Si are prepared as the matrix and Al-Si/diamond composites are fabricated by pressure infiltration under 800℃ and 5Mpa. The analysis of the SEM and the element distribution maps detected by the EDX shows that, as the Si addition, the Si skeleton of the AlSi-eutectic phase segregates to the diamond particle surface and form a better bonding between the reinforcement phase and the matrix. The highest thermal conductivity of the composites gets at Al-1.0Si/diamond as 248 W/m K. The results, which are calculated using the differential effective medium scheme (DEM), indicate that the interfacial thermal conductance (h) shows first an increase and then a decrease with Silicon content. Overall, Si addition can raise the h.
Yang Zhang Xitao Wang Jianhua Wu
State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing
国际会议
北京
英文
708-712
2009-08-10（万方平台首次上网日期，不代表论文的发表时间）