Influence of Leveler Concentration on Copper Electrodeposition for Through Silicon Via Filling

摘要：

Through silicon via technology is one of the critical and enabling technologies for 3D packaging. 300μm deep vias with a diameter of 50μm were filled by copper electroplating with CuSO4 and H2SO4 as base electrolyte. Chloride ions, accelerator and leveler were added. The effect of leveler concentration on filling performance was studied. Electrochemical measurements were used to investigate the cathode process and the action of additives. It was found that mass transportation of copper in via became the slowest step in deep vias, small current is necessary to obtain void free deposit and only conformal growth was obtained. And with increasing of leveler concentration filling performance became better.

作者: Huiqin Ling Haiyong Cao Yuliang Guo Han Yu Ming Li Dali Mao

作者单位: School of Materials Science and Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Shan Shanghai Sinyang Semiconductor Materials Co., Ltd, 1268 Wenhe Road, Shanghai, China

会议类型: 国际会议

会议名称: 2009 International Conference on Electronic Packaging Technology & High Density Packaging(2009 电子封装技术与高密度集成技术国际会议)

会议地点: 北京

会议语种:英文

页码: 860-862

在线出版日期: 2009-08-10（万方平台首次上网日期，不代表论文的发表时间）