Sn Whisker Concern in IC Packaging for High Reliability Application
In the study, the Ni underlayer plus matt Sn plated IC packaging of PLCC, PDIP and LQFP were subject to lead free (SAC) and SnPb surface mounting and wave soldering, respectively, then followed by TCT (-55℃ to 85℃) 1000 cycle, THT (60℃ /90％RH) 3000hrs to investigate whisker growth propensity. The practical whisker performance confirmation on the PCB beyond reflow simulation and component level was concluded to understand the Sn whisker potential in term of Ni underlayer efficiency. Additionally, various Sn thickness over Ni layer in packaging level was also applied to explore the Sn thickness effect on the whisker growth over TCT. The Ni underlayer as Cu migration barrier to mitigate Sn whisker growth efficiency was concluded for high reliability application.
Jeffrey Chang Bing Lee
IST-Integrated Service Technology19, Pu-Ding Rd., Hsin-chu 30072, Taiwan, China IST-Integrated Service Technology 19, Pu-Ding Rd., Hsin-chu 30072, Taiwan, China
国际会议
北京
英文
1014-1018
2009-08-10（万方平台首次上网日期，不代表论文的发表时间）