A Resonant Gate-Drive Circuit Capable of High-Frequency and High-Efficiency Operation

摘要：

This paper deals with a new resonant gate-drive circuit for power MOSFETs. The proposed gate-drive circuit is characterized by a resonant inductor connected in series to the gate terminal of the MOSFET. It is possible to charge or discharge the input capacitance of the MOSFET by using the series resonance between the inductor and the input capacitance. Experimental results are shown to verify the viability of the resonant gate-drive circuit. As a result, the proposed resonant gate-drive circuit reduces its power consumption by a factor of ten, compared with a conventional one. A high-frequency MOSFET inverter driven by the proposed gate-drive circuits exhibits a high efficiency more than 99％ at a 360-kHz and 1-kW operation.

关键词： Gate-drive circuit high-frequency inverters resonant circuits resonant converters

作者: Hideaki Fujita

作者单位: Tokyo Institute of Technology,Tokyo,Japan

会议类型: 国际会议

会议名称: 第六届IEEE国际电力电子与运动控制会议(2009 IEEE 6th International Power Electronics and Motion Control Conference-ECCE Asia

会议地点: 武汉

会议语种:英文

页码: 1-7

在线出版日期: 2009-05-17（万方平台首次上网日期，不代表论文的发表时间）