Fabrication and Characterization of micro Opto-electronic Sensor
Tunneling junction is the basic structure of photoconductive semiconductor switch (PCSS) and single electric transistor (SET). In order to get ultra high speed PCSS, photo lithography and AFM nano oxidation methods are combined to fabricate micro metal (Ti)-insulator (TiOx) metal (Ti) tunneling junction (MIM) type PCSS. Multi junctions structure is tried to enhance the PCSSs photoelectric efficiency. The I-V characteristics, such as effect of TiOx wire width on tunneling and effect of TiOx wires number on Tunneling of the tunneling junctions, are studied and analyzed in this paper. The results indicate that there is a clear exponential relationship between tunneling current and bias voltage and that different TiOx wire width and different numbers of TiOx wires induce different tunneling phenomena.
photoconductive semiconductor switches (PCSS) metal-insulator-metal (MIM) tunneling junction AFM tip induced anodic ozidation Ti ozidation wire
LIU Qing-gang YAN Zhi-hong ZHAO Ling LOU Xiao-na HU Xiao-tang
State key Lab of Precision Measuring Technology & Instrument,Tianjin University Tianjin 300072,China
国际会议
长沙
英文
20-23
2009-04-11（万方平台首次上网日期，不代表论文的发表时间）