Plasmon-resonant Microchip Emitters and Their Applications to Terahertz Spectroscopy
This paper reviews recent advances in emission of THz radiation from our original dual-grating gate high-electron mobility transistors (HEMTs) originated from two-dimensional plasmons. The dual grating gates can alternately modulate the 2D electron densities to periodically distribute the plasmonic cavities along the channel, acting as an antenna. The sample was abricated with standard GaAs-based heterostructure material systems, succeeding in emission of broadband (0.5 to 6.5 THz) radiation even at room temperature from self-oscillating 2D plasmons under appropreate DC-bias conditions. Currently maximum available THz output power s estimated to be on the order of 1 to 10 μW from a single die active area of 75×75 μm2 with an excellent power conversion efficiency of 10-3. The fabricated device was introduced to the Fourier-transform infrared spectroscopy as a microchip THz source. Water-vapor absorption spectrum was successfully observed at 300 K, which is proven to the standard data provided by NASA.
T.Otsuji Y.Tsuda T.Komori T.Nishimura A.El Fatimy Y.M.Meziani T.Suemitsu E.Sano
Research Institute of Electrical Communication,Tohoku University,Japan Research Center for Integrated Quantum Electronics,Hokkaido University,Japan
国际会议
Progress in Electromagnetics Research Symposium 2009(2009年电磁学研究新进展学术研讨会)(PIERS 2009)
北京
英文
11-15
2009-03-23（万方平台首次上网日期，不代表论文的发表时间）