Design of a SiGe BiCMOS Power Amplifier for WiMAX Application
Worldwide interoperability for microwave access (WiMAX) wireless communication system has been gradually popular in recent years. WiMAX mainly provides a high data rate, long transmission distance, wide coverage, and good quality of service technology to improve the drawback in wireless fidelity (Wi-Fi). Power amplifier is one of the most important components in WiMAX transmitter. A power amplifier operating at 3.5 GHz for WiMAX application is proposed in this paper. The TSMC 0.35-μm SiGe BiCMOS technology is used in this design. The choice of using SiGe BiCMOS technology for this design is based on its better breakdown robustness than CMOS and Si BJT (for same fT ), its technology availability and maturity, and its single-chip integration potential with multi-million gate digital CMOS. The proposed power amplifier is design with two stages open collector common-emitter amplifier. The results demonstrate that it can provide a reasonable efficiency, linearity and good output power.
Cheng-Chi Yu Yao-Tien Chang Meng-Hsiang Huang Luen-Kang Lin Hsiao-Hua Yeh
Department of Communications Engineering,Feng-Chia University 100,Wen-Hua Rd.,Taichung 407,Taiwan,R.O.C.
国际会议
Progress in Electromagnetics Research Symposium 2009(2009年电磁学研究新进展学术研讨会)(PIERS 2009)
北京
英文
911-913
2009-03-23（万方平台首次上网日期，不代表论文的发表时间）