Modeling of the Potential Profile for the Annealed Polycrystalline PbSe Film

摘要：

A new model for the mechanism of photoconductivity in annealed polycrystalline PbSe film is presented. The combined mechanism with respect to double heterojunction due to oxidation layer, dopant segregation and carrier trapping at grain-boundary is proposed. This letter focuses on characterizing the potential profile, which is extremely important from the viewpoint of carrier transport phenomena. A potential profile adjacent to the boundaries was calculated, and the effect of biased voltage was in detail discussed, which shows that the mechanism of photoconductivity of annealed polycrystalline PbSe film depends on properties of the grain boundaries.

作者: Gang Bi Fanghai Zhao Jiangang Ma Shaibal Mukherjee Donghui Li Zhisheng Shi

作者单位: School of Electrical and Computer Engineering University of Oklahoma,Norman,Oklahoma 73019,USA;Schoo School of Electrical and Computer Engineering University of Oklahoma,Norman,Oklahoma 73019,USA

会议类型: 国际会议

会议名称: Progress in Electromagnetics Research Symposium 2009(2009年电磁学研究新进展学术研讨会)(PIERS 2009)

会议地点: 北京

会议语种:英文

页码: 931-934

在线出版日期: 2009-03-23（万方平台首次上网日期，不代表论文的发表时间）