Relative Mobility and Relative Conductivity in ALD-FET (Atomic Layer Doped-field Effect Transistor) in GaAs

摘要：

We calculate the relative mobility and relative conductivity between source and drain as function of gate voltage for Atomic Layer Doped-Field Effect Transistor (ALD-FET) in a GaAs matrix. The mobility is described via a relative quantity that was presented in 1. That expression does not have empirical form, neither empirical parameter. Also a phenomenological expression of the conductivity is presented, which is derived from the mobility expression. The calculation this relative quantities was performed with a model for the ALD-FET that was shown in 2. In the end, we report for the first time an analytical mobility of electronic relative ALD-FET. With these tools, it look that different behaviours of transport properties for ALD-FET.

作者: O.Oubram L.M.Gaggero Sager D.S.Díaz-Guerrero

作者单位: Facultad de Ciencias,Universidad Autónoma del Estado de Morelos Av.Universidad 1001,Col.Chamilpa,CP 62209,Cuernavaca,Morelos,Mexico

会议类型: 国际会议

会议名称: Progress in Electromagnetics Research Symposium 2009(2009年电磁学研究新进展学术研讨会)(PIERS 2009)

会议地点: 北京

会议语种:英文

页码: 1186-1190

在线出版日期: 2009-03-23（万方平台首次上网日期，不代表论文的发表时间）