Structural and Magnetic Properties of Mn Implanted GaN

摘要：

(Ga, Mn)N with Mn concentration of 0.04-5 at.％ has been achieved by Mn ion implantation into MOCVD grown GaN. Structural and magnetic properties of the material were studied by X-ray diffraction and vibrating sample magnetometer respectively. Ferromagnetic properties of the samples at room temperature have been observed. The saturation magnetization reached to its maximum value with Mn concentration of 2 at.％.

作者: Abdul Majid Akbar Ali Rehana Sharif J.J.Zhu X.F.Han

作者单位: Advance Materials Physics Lab,Physics Department Quaid-I-Azam University,Islamabad,Pakistan;State Ke Advance Materials Physics Lab,Physics Department Quaid-i-Azam University,Islamabad,Pakistan State Key Laboratory of Magnetism Institute of Physics,Chinese Academy of Sciences,Beijing 100083,Ch State Key Laboratory on Integrated Optoelectronics Institute of Semiconductor,Chinese Academy of Sci

会议类型: 国际会议

会议名称: Progress in Electromagnetics Research Symposium 2009(2009年电磁学研究新进展学术研讨会)(PIERS 2009)

会议地点: 北京

会议语种:英文

页码: 1199-1203

在线出版日期: 2009-03-23（万方平台首次上网日期，不代表论文的发表时间）