A Physical De-embedding Method for Silicon-based Device Applications

摘要：

In the recent years, de-embedding method of open-short, and open-thru with dummy DUTs are mostly used for on-wafer devices. This paper shows a method, called L-2L, with two metal lines or transmission lines. One is two times the length of the other one. Based on the measurement data of two lines, PAD parasitics and scalable length model with certain width are obtained by L2L. Furthermore, the tape-out DUT numbers for the de-embedding are extremely minimized to 2. The applications for inductors by 65nm Low-K Si-based process and 0.18 1m FSG Si-based process, and for 0.13 1m transmission lines are also shown for benchmark in this paper.

作者: Hsiao-Tsung Yen Tzu-Jin Yeh Sally Liu

作者单位: Taiwan Semiconductor Manufacturing Company Ltd.9,Creation Road,Hsinchu Science Park,Hsinchu,Taiwan,R Taiwan Semiconductor Manufacturing Company Ltd.9,Creation Road,Hsinchu Science Park,Hsinchu,Taiwan,R

会议类型: 国际会议

会议名称: Progress in Electromagnetics Research Symposium 2009(2009年电磁学研究新进展学术研讨会)(PIERS 2009)

会议地点: 北京

会议语种:英文

页码: 1339-1343

在线出版日期: 2009-03-23（万方平台首次上网日期，不代表论文的发表时间）