Electronic Properties of Quantum Wells Structures with Gaussian Potential Profiles

摘要：

The first semi-empirical tight-binding calculation of the electronic properties of some quantum wells structures with Gaussian confining potential is presented. The obtained results demonstrate that this methodology can be useful for realistic calculations of the electronic structure in this kind of systems.

作者: S.Jelev-Vlaev A.Enciso-Mu(n)oz D.A.Contreras-Solorio

作者单位: Unidad Académica de Física,Universidad Autónoma de Zacatecas Calzada Solidaridad Esquina con Paseo La Bufa s/n,C.P.98060,Zacatecas,ZAC.,México

会议类型: 国际会议

会议名称: Progress in Electromagnetics Research Symposium 2009(2009年电磁学研究新进展学术研讨会)(PIERS 2009)

会议地点: 北京

会议语种:英文

页码: 1357-1360

在线出版日期: 2009-03-23（万方平台首次上网日期，不代表论文的发表时间）