Electrical Defect Issues of Hetero-Epitazy for Advanced Nanometric CMOS Technologies

摘要：

Epitaxial techniques have been around for several decades already, but are now becoming an essential process module for several state-of-the-art process technologies, whereby the stringent defect control requirements have imposed new challenges. Some state-ofthe-art hetero-epitaxial applications are briefly reviewed from a defect engineering point of view.

作者: C. Claeys M. Bargallo Gonzalez G. Eneman A. Hikavyy R. Loo E. Simoen

作者单位: IMEC,Kapeldreef 75,B-3001 Leuven,Belgium EE Depart.,KU Leuven,Kasteelpark Arenberg 10,B-3001 Leuven, IMEC,Kapeldreef 75,B-3001 Leuven,Belgium EE Depart.,KU Leuven,Kasteelpark Arenberg 10,B-3001 Leuven, IMEC,Kapeldreef 75,B-3001 Leuven,Belgium

会议类型: 国际会议

会议名称: ISTC/CSTIC2009中国国际半导体技术研讨会

会议地点: 上海

会议语种:英文

页码: 3-8

在线出版日期: 2009-03-19（万方平台首次上网日期，不代表论文的发表时间）