Investigation into the Output Characteristics and Improvement of Operation Margin of IMOS (Impact Ionization MOS) Devices

摘要：

The output characteristics of typical Impact Ionization MOS (IMOS) devices is comprehensively investigated in this paper. The results show that IMOS devices exhibit a narrow operating margin with non-saturated on-current. To improve the output characteristics, a new structure named pocket IMOS is proposed. Compared with the typical I-MOS devices, thepocket I-MOScan achieve a wider operating margin with lower source-drain bias and enhanced output performance.

作者: Huichu Liu Ru Huang Zhenhua Wang

作者单位: Department of Microelectronics,Peking University,Beijing 100871,China

会议类型: 国际会议

会议名称: ISTC/CSTIC2009中国国际半导体技术研讨会

会议地点: 上海

会议语种:英文

页码: 21-26

在线出版日期: 2009-03-19（万方平台首次上网日期，不代表论文的发表时间）