Minimizing device variation caused by RTA temperature variation across the shot field

摘要：

Spike Rapid Thermal Annealing (RTA) is a commonly used method for source and drain dopant activation in 65nm CMOS technology. It is found that the Idsat variation is very sensitive to RTA temperature. To better control the Idsat uniformity across the shot, a systematic study on STI and poly pattern density distribution across the shot field and their effects on the RTA temperature was carried out. It was demonstrated that the STI and poly pattern density variation across the field will result in more than 10oC RTA temperature variation. To minimize the effect, an optimization of RTA ramp rate and peak temperature was studied. Source/drain (S/D) extension and S/D implant optimization has also been done for the reduction of PMOS device Idsat temperature sensitivity

作者: Jianhua Ju Albert Hung Hokmin Ho Jay Ning Eric Liu Shugang Dai Allan Zhou Zhaoxu Shen Jinhua Liu Brisk Wang Daniel Deng Julie Tang

作者单位: Logic Technology Development Center,SMIC (BJ) Beijing 100176,PRC

会议类型: 国际会议

会议名称: ISTC/CSTIC2009中国国际半导体技术研讨会

会议地点: 上海

会议语种:英文

页码: 27-31

在线出版日期: 2009-03-19（万方平台首次上网日期，不代表论文的发表时间）