Transport in Silicon Nanowire Transistors

摘要：

Mobility and strain effects in silicon nanowire MOSFETs are extensively studied by experiments. The electron mobility of silicon nanowire with width less than 10nm has been evaluated by the split CV method for the first time. It is found that the mobility decreases with decreasing nanowire width and depends strongly on nanowire direction. The strain effects of nanowire nMOSFETs have been evaluated for the first time. It is found that the transverse tensile strain offers more favorable effects than the longitudinal one in terms of Ion/Ioff ratio.

作者: T. Hiramoto J. Chen Y.J. Jeong T. Saraya

作者单位: Institute of Industrial Science,University of Tokyo 4-6-1 Komaba,Meguro-ku,Tokyo 153-8505,Japan

会议类型: 国际会议

会议名称: ISTC/CSTIC2009中国国际半导体技术研讨会

会议地点: 上海

会议语种:英文

页码: 55-60

在线出版日期: 2009-03-19（万方平台首次上网日期，不代表论文的发表时间）