Silicon Nanocrystals Synthesized by Electron-beam Co-evaporation Method and Their Application for Nonvolatile Memory
(0) The Silicon nanocrystals designed for nonvolatile memory applications are for the first time prepared by electron beam coevaporation of Si and SiO2 hybrid. Transmission electron microscopy observation and Raman scattering certify the formation of Si NCs. Metal oxide semiconductor capacitor structures with Si NCs embedded in the gate oxide are fabricated to characterize the memory behavior. High-frequency capacitancevoltage and capacitance-time measurements demonstrate the memory behavior of the structure resulting from the charging/discharging behaviors of Si NCs. It is found that the flatband voltage can be changed by adjusting the concentration of Si and SiO2 in the hybrids. The Si nanocrystals memory device has yielded good retention characteristics with small charge loss.
Chen Chen Tian Chun Ye Rui Jia Ming Liu Wei Long Li Chen Xin Zhu Hao Feng Li Pei Wen Zhang Chang Qing Xie Qin Wang
Microfabrication and nanotechnology Lab,Institute of Microelectronics,ChineseAcademy of Sciences,Beijing 10029,China
国际会议
上海
英文
93-98
2009-03-19（万方平台首次上网日期，不代表论文的发表时间）