Simulation of retention characteristics for metal nanocrystal nonvolatile memory with a modified direct tunneling model

摘要：

By comparing the impacts of Coulomb blockade e.ect and quantum confinement e.ect on the energy band shift of metal nanocrystal, it is obvious that not only quantum confinement e.ect but Coulomb blockade e.ect could influence the energy band shift of metal nanocrystal. Taking into consideration these two e.ects, a modified direct tunneling model and numerical calculations is proposed for describing the retention characteristics of metal nanocrystal nonvolatile memories completely. The simulation results which compare well with experimental data show that the retention characteristics are not only dependent on tunneling dielectric thickness, but are also related to the barrier height, dielectric constant, as well as the nanocrystal coverage ratio.

作者: Yingtao Li Ming Liu Shibing Long Qin Wang Qi Liu Sen Zhang Yan Wang Qingyun Zuo Su Liu

作者单位: Laboratory of Nano-fabrication and Novel Devices Integrated Technology,Institute of Microelectronics Laboratory of Nano-fabrication and Novel Devices Integrated Technology,Institute of Microelectronics Institute of microelectronics,School of physical science and technology,Lanzhou University,Lanzhou 7

会议类型: 国际会议

会议名称: ISTC/CSTIC2009中国国际半导体技术研讨会

会议地点: 上海

会议语种:英文

页码: 141-148

在线出版日期: 2009-03-19（万方平台首次上网日期，不代表论文的发表时间）