Advanced 3D-AFM Metrology for Sidewall Spacers

摘要：

Gate spacer engineering has become one of the primary concerns in dimensional metrology for semiconductor manufacturing process control. In composite spacers, deposition and etch of each spacer determine where the transistor source/drain implants occur. The sidewall spacer thickness and profile, especially at the feature bottom, is critical to be characterized and controlled by applicable 3D metrology. This paper discusses recent advances in 3D atomic force microscopy (3D-AFM) that solve the specialized characterization needs for critical sidewall spacer geometry controls, including multiple spacer thickness and nitride spacer pulldown. 3D-AFM metrology measures with greater accuracy such typical gate spacer parameters as linewidth, height, pitch, sidewall profile, sidewall angle (SWA), line edge roughness (LER), and line width variation (LWV), and sidewall roughness (SWR).

作者: T. Bao, V. Ukraintsev D. Dawson

作者单位: Veeco Instruments Inc,112 Robin Hill Rd,Santa Barbara,CA 93117,USA

会议类型: 国际会议

会议名称: ISTC/CSTIC2009中国国际半导体技术研讨会

会议地点: 上海

会议语种:英文

页码: 169-175

在线出版日期: 2009-03-19（万方平台首次上网日期，不代表论文的发表时间）