Si-O bond-breakage energetics under consideration of the whole crystal

摘要：

We extend the McPherson model for Si-O bond-breakage energetics, which considers only a single SiO4 tetrahedron, in a way to capture the effect of the whole crystal. No ledge in the direction assumed in the McPherson model was revealed. Instead, potential profiles feature a saddle point in a different direction. The activation energy for bond-breakage is found to be rather high (～6 eV). This suggests that the interaction with the electric field alone is not sufficient for bond rupture. The breakage rate calculated for a bond weakened by hole capture is comparable to that of the McPherson model. We conclude that only the common action of an electric field and other factors (structural disorder and/or energy delivered by particles, e.g. hot carriers) can result in bond-breakage.

作者: S.E. Tyaginov V. Sverdlov W. G(o)s Ph. Schwaha R. Heinzl F. Stimpfl T. Grasser

作者单位: Christian Doppler Laboratory for TCAD at the Institute for Microelectronics,TU Wien,Gu?hausstra?e 25-29,A-1040 Vienna,Austria Institute for Microelectronics,TU Wien,GuBhausstraBe 25-29,A-1040 Vienna,Austria

会议类型: 国际会议

会议名称: ISTC/CSTIC2009中国国际半导体技术研讨会

会议地点: 上海

会议语种:英文

页码: 213-218

在线出版日期: 2009-03-19（万方平台首次上网日期，不代表论文的发表时间）