Drain Bias Effect on the Interface Traps of pMOSFETs under Negative Bias Temperature Stress

摘要：

Negative bias temperature instability (NBTI) has been a major reliability issue for advanced CMOS technology. Significant drain-bias effect on NBTI has been demonstrated. In this paper, the correlation between drain-bias dependent NBTI and the interface trap (Nit) is studied. Charging pumping measurement was performed to monitor the Nit behavior and on-the-fly technique was used to measure the degradation and recovery behaviors of threshold voltage (Vth) in the pMOSFETs. The results show that significant NBTI degradation under higher drain bias can be owed to the drain bias enhanced generation of the non-recovered interfacial traps associated with Si-H bond breaking effect.

关键词： Negative bias temperature instability (NBTI), charge-pumping technique (CP), interfacial traps, nitrided ozides.

作者: J.Y. Pan J.Q. Yang Y. Qiao X.Y. Liu R.Q. Han J.F. Kang C. C. Liao H.M. Wu Y.J. Wu

作者单位: Institute of Microelectronics,Peking University,Beijing 100871,P. R. China Semiconductor Manufacturing International Corporation,18 Zhangjiang Road,Shanghai

会议类型: 国际会议

会议名称: ISTC/CSTIC2009中国国际半导体技术研讨会

会议地点: 上海

会议语种:英文

页码: 219-223

在线出版日期: 2009-03-19（万方平台首次上网日期，不代表论文的发表时间）