Performance Improvement of CuOz RRAM for Non-volatile Applications
We found CuOx thin film with gradual oxygen concentration (GOC) distribution enhances resistive switching characteristics for nonvolatile memory applications. Using Al/ GOC CuOx /Cu structure, not only no forming is needed, also the endurance of switching is greatly enhanced. The device with GOC CuOx demonstrates resistance on/off ratio greater than 100, and endurance of more than 12000 cycles. A ramped pulses series (RPS) operation method is also put forward, which can improve switching stability and cycling endurance remarkably. A method for minimizing the dispersion of Vreset by optimizing amplitude of pulse is proposed further. Dispersion of Vreset can be minimized by using optimized Vstart of RPS. And this phenomenon agrees well with the Joule heating model that the RESET process of memory switching is associated with rupturing of filaments by Joule heating.
Y.Y. Lin P. Zhou M. Yin H. B. Lv S. Song R.Huang J.G.Wu H. M. Wu M. H. Chi
State Key Lab of ASIC & System,Research Center of Semiconductor Memory and Application,Fudan Univers Memory Technology Development Center,Semiconductor Manufacturing InternationalCorp.,Shanghai,201203,
国际会议
上海
英文
281-286
2009-03-19（万方平台首次上网日期，不代表论文的发表时间）