Investigation on Chemical Mechanical Polishing of GeSbTe for High Density Phase Change Memory

摘要：

Phase change memory (PCM) is considered to be a prospective candidate to replace flash for next generation non-volatile memory. In this paper, we studied GST chemical mechanical polishing (CMP) process characterization and optimization on 8-inch wafers. CMP experiment was performed on GST blanket and pattern wafers. GST CMP process optimization experiment was made in both chemical (slurry) and mechanical (pressure) aspects. AFM data shows that the RMS of roughness has been reduced from 2.151 nm to 1.276 nm after GST CMP on the blanket wafer. On the other hand, high density (40％) GST pattern wafer was polished to evaluate the CMP capability. SEM and EDS results demonstrate that GST via array has been achieved by GST CMP process while the element stoichiometric proportion in GST via is not changed. This work paved the way for PCM development to the commercial high density PCM devices in the future.

作者: Min Zhong Zhi-Tang Song Bo Liu Song-Lin Feng Zhi-Feng Xie Fu-Xiong Zhang Yang-Hui Xiang

作者单位: State Key Laboratory of Functional Materials for Informatics,Laboratory of Nanotechnology,Shanghai I State Key Laboratory of Functional Materials for Informatics,Laboratory of Nanotechnology,Shanghai I Semiconductor Manufacturing International Corporation,Shanghai 201203

会议类型: 国际会议

会议名称: ISTC/CSTIC2009中国国际半导体技术研讨会

会议地点: 上海

会议语种:英文

页码: 429-434

在线出版日期: 2009-03-19（万方平台首次上网日期，不代表论文的发表时间）