Application of Surfactant in Si CMP Processing

摘要：

With the rapidly developing of ULSI fabrication technique to high integration and low cost, the key technology is how to ensure the higher flattening, lower roughness and lower cost. The chemical mechanical polishing (CMP) method is the best one for global planarization. In this paper, the CMP mechanism process of silicon wafer was analyzed, and it was pointed that chemical reaction was the kinetics control process. The influence of surfactant on silicon surface quality during CMP process was also discussed, and the contrast experiments were processed. SiO2 was selected as abrasive, which particle size was 40nm. And the polishing temperature was 25℃. At the end of silicon CMP, the water polishing was processed using de-ionized water with surfactant, and the optimal surface was gotten, and the surface roughness was 0.5nm.

作者: B.M. Tan X.H. Niu P. Liang T. Wu Y. L. Liu

作者单位: Institute of Microelectronics,Hebei University of Technology,Tianjin,300130,China

会议类型: 国际会议

会议名称: ISTC/CSTIC2009中国国际半导体技术研讨会

会议地点: 上海

会议语种:英文

页码: 547-552

在线出版日期: 2009-03-19（万方平台首次上网日期，不代表论文的发表时间）