Advanced Process Control of HfzSi1-zO2 Composition using Co-injection Atomic Layer Deposition

摘要：

A novel Atomic Layer Deposition (ALD) process has been developed in which chemical precursors are co-injected and simultaneously reacted. The process demonstrates hafnium silicate films of uniform composition that can be easily tuned from <30 to >80％ Hf concentration to meet specific device requirements with excellent thickness control proportional to the number of process cycles. The film has been fully integrated into a CMOS structure and provides repeatable parametric results over a wide range of film compositions. In addition we review a VUV metrology technique correlated to X-ray photoelectron spectroscopy that enables measurement of the hafnium vs. silicon composition in very thin films <50 ? with sensitivity to lower hafnium concentration in the interfacial layer for films deposited directly upon silicon substrates.

作者: L. D. Bartholomew A. Bavin T. Lazerand V. Rao M. Weldon L.Wang

作者单位: Aviza Technology,440 Kings Village Rd.,Scotts Valley,California 95066,USA MetroSol,Inc.,2101 Donley Drive ＃101,Austin,Texas 78758,USA

会议类型: 国际会议

会议名称: ISTC/CSTIC2009中国国际半导体技术研讨会

会议地点: 上海

会议语种:英文

页码: 567-574

在线出版日期: 2009-03-19（万方平台首次上网日期，不代表论文的发表时间）