Sub-micrometer Organic Field Effect Transistors

摘要：

Pentacene organic field effect transistors with a series of submicrometer channel have been fabricated and characterized. Source and drain metal electrodes was made by electron-beam lithography and lift-off process. Image reversal photo resist was used to make integrated mask to pattern the organic semiconductor film to reduce the off-state current. And thiol treatment was applied on gold electrodes to modify their surface energy and improve the charge carrier injection. All the devices can behavior as typical p-type transistor, and have obvious saturation. Using electrode and dielectric surface treatment, device performances have significant improvement. All of the performances, including mobility, threshold voltage and on/off current ratio will change with the channel length decreasing because of the low quality interface between the OSC and dielectrics.

作者: L. Shang M. Liu Z. Ji G. Liu X. Liu J. Liu H. Wang

作者单位: Key Laboratory of Nanofabrication and Novel Devices Integration Technology,Instituteof Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

会议类型: 国际会议

会议名称: ISTC/CSTIC2009中国国际半导体技术研讨会

会议地点: 上海

会议语种:英文

页码: 895-900

在线出版日期: 2009-03-19（万方平台首次上网日期，不代表论文的发表时间）