Prediction of Melt-Crystal Interface Shape and Melt Convection in a Large-scale CZ-Si Growth System Using RANS and LES Methods in Global Simulation.

摘要：

Global simulations were performed for a large-scale CZ-Si growth system, in which three models were tested to predict the turbulent melt flow. The three turbulence models are the standard k-εturbulence model using wall functions at solid boundaries, a modified two-layer k-ε turbulence model in RANS method and the standard Smagorinsky SGS model in LES method, respectively. The comparison of the simulation results obtained with these different models showed that each turbulence model has its own features in prediction of the melt convection and the meltcrystal interface shape in a large-scale CZ-Si growth system.

作者: Xin. Liu Lijun. Liu Zaoyang. Li Yuan. Wang Koichi. Kakimoto

作者单位: School of Energy and Power Engineering,Xi’an Jiaotong University,Xi’an,Shaanxi710049,China Research Institute for Applied Mechanics,Kyushu University,Kasuga 816-8580,Japan

会议类型: 国际会议

会议名称: ISTC/CSTIC2009中国国际半导体技术研讨会

会议地点: 上海

会议语种:英文

页码: 983-988

在线出版日期: 2009-03-19（万方平台首次上网日期，不代表论文的发表时间）