Calibration of the Enthalpy-Porosity Based Method for CZ Silicon Growth
A global transport model for industrial Czochralski (CZ) silicon growth is reported in the paper. The model quantifies the temperature fields in all components of the growth system. The heat transport by the conduction, convection (melt and argon flows) and radiation are treated along with the momentum balance in the presence of the static magnetic fields. The crystallization process is modeled by an enthalpy-porosity method in which, the phase change occurs across a finite region defined by volumetric sink/source of heat (enthalpy) and momentum. The momentum sink/source is formulated based on the Darcys law for porous medium, which is simply a numerical treatment for the isothermal solidification. The flow field in the Czochralski melt predicted by the global enthalpy-porosity based model is compared with that predicted by a more accurate simplified local model. Our studies indicate that the intensity of the flow induced by the presence of the crystal/melt interface is underestimated by the enthalpyporosity based formulation.
Bing Dai Balaji Devulapalli Prashant Gunjal Milind Kulkarni
MEMC Electronic Materials Inc.,St. Peters,Missouri 63376,USA Tridiagonal Solutions,Pune,India
国际会议
上海
英文
989-994
2009-03-19（万方平台首次上网日期，不代表论文的发表时间）