Advances in the Understanding of Ozide Precipitate Nucleation in Silicon

摘要：

The influence of vacancy supersaturation installed by RTA pretreatments in CZ silicon wafers on oxide precipitate nucleation was investigated in the temperature range 700-1000 °C. Precipitation is enhanced at 800 °C and increases with increasing vacancy concentration. Getter efficiency tests for Cu and Ni have shown that the threshold value of the normalized inner surface is shifting to higher values for increasing RTA temperature. This can be explained by a morphological change of the oxide precipitates with increasing vacancy concentration from plate-like to spherical shape.

作者: G. Kissinger D. Kot V. Akhmetov A. Sattler T. Müller W. von Ammon

作者单位: IHP,Im Technologiepark 25,15236 Frankfurt (Oder),Germany IHP/BTU Joint Lab,Universit(a)tsplatz 3-4,03044 Cottbus,Germany Siltronic AG,Hanns-Seidel-Platz 4,81737 München,Germany

会议类型: 国际会议

会议名称: ISTC/CSTIC2009中国国际半导体技术研讨会

会议地点: 上海

会议语种:英文

页码: 995-1000

在线出版日期: 2009-03-19（万方平台首次上网日期，不代表论文的发表时间）