CLUSTER ION IMPLANTATION SYSTEM: CLARIS FOR BEYOND 45NM DEVICE FABRICATION (II)

摘要：

Newly developed sweep beam Cluster ion implanter: CLARIS with 0.2-7keV energy range for Boron beam and 1-10keV energy range for Carbon beam is introduced. Novel Cluster ion implantation technology is capable for 45nm beyond device requiring USJ formation (<15nm) with high retain dose (>70％) and low sheet resistivity (<1200Ω/sq). Comparison of retain dose and sheet resistivity of B18, BF2, and B beams with FLA shows the superiority of the B18 implantation for less than 500eV implantation.

作者: Masayasu Tanjyo Bohn O. Borland Nariaki Hamamoto Tsutomu Nagayama Sei Umisedo Yuji Koga Noriaki Maehara Hideyasu Une Takao Matsumoto Nobuo Nagai

作者单位: Nissin Ion Equipment Co.,ltd.,Kuze-tonoshiro-cho,Minami-ku,Kyoto 601-8205,Japan JOB Technology,98-1204 Kuawa St. Aiea,Hl 96701,USA

会议类型: 国际会议

会议名称: ISTC/CSTIC2009中国国际半导体技术研讨会

会议地点: 上海

会议语种:英文

页码: 1059-1064

在线出版日期: 2009-03-19（万方平台首次上网日期，不代表论文的发表时间）