Silicon Etching Technology Using Inductively Coupled Plasma Suitable for Fabrication of Silicon Nanowires and Ring Resonators

摘要：

Silicon-on-insulator (SOI) is an attractive platform for single chip photonic integration. Silicon nanowires fabricated by SOI substrate are fundamental components such as ring resonators in the optoelectronics integrated circuits. High performance of these devices requires silicon nanowires have vertical and smooth sidewalls. In this paper, we report the fabrication of silicon nanowires with vertical and smooth sidewalls using SF6/C2H4/Ar based inductively-coupled-plasma (ICP) etching, Ring resonator with 200nm gap was fabricated. This technology is suitable for fabrication of planar photonic integrated components and circuits.

作者: Jingtao Zhou Huajun Shen Huihui Zhang Xinyu Liu

作者单位: Institute of Microelectronics of Chinese Academy of Sciences 3 Beitucheng West Road,Chaoyang District,Beijing,PR China

会议类型: 国际会议

会议名称: ISTC/CSTIC2009中国国际半导体技术研讨会

会议地点: 上海

会议语种:英文

页码: 1065-1070

在线出版日期: 2009-03-19（万方平台首次上网日期，不代表论文的发表时间）