Fabrication of transmission gratings for eztreme ultraviolet interference lithography

摘要：

Transmission gratings with a period of 100 nm for extreme ultraviolet interference lithography are fabricated with 2 groups of 50 nm thick Cr bars on a 100 nm thick Si3N4 film. The fabrication process starts with depositing Si3N4 on both sides of (100) Si wafers by LPCVD, followed by electron beam lithography of ZEP520A resist, evaporation of Cr and resist lift-off. A 120 nm thick stop layer of Au is then evaporated onto the surrounding area to eliminate unwanted transmission. Finally, a pair of Si3N4 windows are opened on the back side by dry etching, and the Si under the grating pattern is removed by KOH anisotropic wet etching. Diffraction measurement shows an acceptable first order efficiency of the gratings at the wavelength of 13.4 nm. Using the fabricated gratings at the interference lithography beam line of Shanghai Synchrotron Radiation Facility, economic and efficient fabrication of gratings with a doubled pitch, namely 50 nm period gratings, can be expected.

关键词： transmission grating electron beam lithography anisotropic wet etching eztreme ultraviolet interference lithography

作者: Jie Ma Xiaoli Zhu Weizhong Zhu Changqing Xie Tianchun Ye Peixiong Shi

作者单位: Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 Shanghai Institute of Applied Physics, Chinese Academy of Sciences Shanghai201800 DANCHIP, Technical University of Denmark, Denmark DK-2800

会议类型: 国际会议

会议名称: 第五届仪器科学与技术国际学术会议(ISIST 2008)Fifth International Symposium on Instrmentation Science and Technology

会议地点: 沈阳

会议语种:英文

页码: 1-7

在线出版日期: 2008-09-15（万方平台首次上网日期，不代表论文的发表时间）