Development of high-temperature piezoresistive pressure sensor based silicon on insulator
Silicon on insulator (SOI) substrate was prepared using ion implantation of oxygen technique. For piezoresistive detection, the top layer (0.2μm thick) silicon was used as an active material with the excellent single crystal siliconproperties. The structure of the pressure sensor chip was simulated and analyzed using the finite element method. Thepressure gauge chips were manufactured using MEMS techniques. The Si3N4 films were applied for the mask, and thesilicon cups were manufactured using KOH anisotropic wet etching process. Cr/Ni/Au multi-layers metal electrodeswere applied to guarantee the reliable work at high temperature. The manufactured sensors were measured with anapplied pressure of 0 to 6.0MPa at 300℃. The test results showed that the sensitivity was approximately 30mV/ (mA·MPa), the non-linearity was less than 1.5‰ FS, the repetition was less than 0.9‰FS. The research showed that theSOI piezoresistive pressure sensor could reliably work at a high temperature.
Piezoresistive pressure sensor high temperature SOI structure
Pang Shixin Li Xin Liu Qin Xu Kaixian
Shenyang Academy of Instrumentation Science, Shenyang, China 110043 Shenyang Academy of Instrumentation Science, Shenyang, China 110043 Shenyang University of Technolog
国际会议
第五届仪器科学与技术国际学术会议(ISIST 2008)Fifth International Symposium on Instrmentation Science and Technology
沈阳
英文
1-6
2008-09-15（万方平台首次上网日期，不代表论文的发表时间）