Vacancy–Hydrogen Complezes in ZnO

摘要：

Zinc oxide (ZnO) is a wide band gap semiconductor with the promising potential for many applications, mainly in electronics. Hydrogen in ZnO was recently identified as a source of its n-type conductivity and recent experiments further indicate that significant hydrogen content is inherent to ZnO materials. On the other hand, the role of H in ZnO is yet far from being completely understood. There are several suggestions concerning the way in which hydrogen is incorporated into the ZnO lattice. First, it is interstitial hydrogen that is bound to oxygen atoms. Second, hydrogen atoms may occupy vacancies on both Zn and O sublattices. Furthermore, unbound H atoms may occupy channels (along the hexagonal axis) in the ZnO structure.

作者: J.Kuriplach G.Brauer O.Melikhova J.Cizek I.Prochazka W.Anwand W.Skorupa

作者单位: Charles University in Prague,Faculty of Mathematics and Physics,Department of Low Temperature Physic Institut für Ionenstrahlphysik und Materialforschung,Forschungszentrum Dresden-Rossendorf,01314 Dres

会议类型: 国际会议

会议名称: 第九届国际正电子与正电子素国际会议(9th International Workshop on Positron and Positronium Chemistry)(PPC–9)

会议地点: 武汉

会议语种:英文

页码: 44

在线出版日期: 2008-05-11（万方平台首次上网日期，不代表论文的发表时间）