Positron beam study of Co doped ZnO films prepared by PLD

摘要：

Slow positron beam has been used to study defect structures in Co doped and undoped ZnO films prepared by Pulsed Laser Deposition (PLD) at 400℃, 600 ℃, 700 ℃ on c-plane sapphire. Crystal structures of the samples are investigated by X-ray diffraction (XRD). Positron effective diffusion length (Leff) calculated from the Doppler spectrum of doped samples are larger and change in different tendencies as the growth temperature varying, compared to those of undoped samples. According to the results of XRD, except wurzite ZnO phase, no new crystal phase is observed in Co doped samples. We find that the main positron annihilation centers are Zn vacancies which locate in grain boundaries and Zn sublattice positions, and Co exist in the films as Co2+ in Zn position.

作者: Ren Hongfeng Weng Huimin Ye Bangjiao Han Rongdian Li Hui Gao Chuanbo

作者单位: Department of Modern Physics,University of Science and Technology of China Department of Material Science and Engineering,University of Science and Technology of China

会议类型: 国际会议

会议名称: 第九届国际正电子与正电子素国际会议(9th International Workshop on Positron and Positronium Chemistry)(PPC–9)

会议地点: 武汉

会议语种:英文

页码: 48

在线出版日期: 2008-05-11（万方平台首次上网日期，不代表论文的发表时间）