The behavior of ozygen and defects in Si-based semiconductor studied by positron annihilation techniques

摘要：

The coincidence Doppler broadening of positron annihilation radiation instrument and the mono-energetic slow positron beam instrument have been used to measure the Doppler broadening spectra for the SiO2 and samples of Cz-Si with an initial oxygen content (1.1×1018 cm-3), thermally treated at several temperatures and pressures. The following experimental results have been obtained: (1) In the single crystal of SiO2, the momenta of 2p electrons of O atom is higher than that of 3p electrons of Si atom. There is a relatively high peak at 11.85×10-3m0c on the ratio curve of SiO2, it is due to positron annihilation with high momentum electron of O atom. And it can be used to characterize the behavior of O atom in Si-based semiconductor.

作者: Deng Wen Huang Le Zhu Qi-Tao Wei Ya-Qin Huang Yu-Yang

作者单位: Department of Physics,Guangxi University,Nanning 530004,P.R.China

会议类型: 国际会议

会议名称: 第九届国际正电子与正电子素国际会议(9th International Workshop on Positron and Positronium Chemistry)(PPC–9)

会议地点: 武汉

会议语种:英文

页码: 83

在线出版日期: 2008-05-11（万方平台首次上网日期，不代表论文的发表时间）