Study of compensation defects and electron irradiation-induced defects in undoped SI-InP by positron lifetime Spectroscopy

摘要：

Positron annihilation lifetime(PAL) spectroscopy, photo-induced current transient spectroscopy(PICTS) and thermally stimulated current(TSC) have been employed to study the formation of compensation defects in undoped semi-insulating InP1,2 and their evolvement under iron phosphide(IP) ambience or pure phosphide(PP) ambience when annealing in different conditions, which render undoped as-grown InP semi-insulating. In the formation of IP SI-InP, Fe atoms diffuse and enter the position of Vin, producing substitutional compensation defects FeIn. The diffusion of Fe atoms suppress the formation of some open-volume defects, resulting in a smaller positron average lifetime.

作者: J.J.Long A.H.Deng J.Yu X.X.Yu X.Cheng Y.L.Zhou Y.J.Zhang

作者单位: Department of Applied Physics,Sichuan University,Chengdu 610065,P.R.China

会议类型: 国际会议

会议名称: 第九届国际正电子与正电子素国际会议(9th International Workshop on Positron and Positronium Chemistry)(PPC–9)

会议地点: 武汉

会议语种:英文

页码: 85

在线出版日期: 2008-05-11（万方平台首次上网日期，不代表论文的发表时间）