Defects in Electron Irradiation Te-doped GaSb Studied by Positron Lifetime Spectroscopy

摘要：

Gallium antimonide (GaSb) is a Ⅲ-Ⅴ semiconductor with a narrow band gap of 0.7 eV at 300 K and 0.81 eV at 2 K. It has small effective electron mass and high electron mobility. Due to its potential applications in low loss optical fibers and high efficiency solar cells researches on GaSb have been enhanced. Since defects play an important role in the electrical and optical properties of GaSb, a much better understanding of existence and stability of defect structures is required.

作者: H.Li J.Y.Ke J.B.Pang B.Wang Z.Wang

作者单位: Department of physics,Wuhan University,Wuhan 430072,P.R.China

会议类型: 国际会议

会议名称: 第九届国际正电子与正电子素国际会议(9th International Workshop on Positron and Positronium Chemistry)(PPC–9)

会议地点: 武汉

会议语种:英文

页码: 91

在线出版日期: 2008-05-11（万方平台首次上网日期，不代表论文的发表时间）