Defects Studies of As-grown Single Crystal ZnO by Positron

摘要：

ZnO is a Ⅱ-Ⅵ compound semiconductor with wide band gap of 3.4 eV and large Ⅵ exciton binding energy of 60meV.These features enable its potential application in short wavelength light emitting devices.There is a growing interest in the investigation of this materials in recent yeas. Among these investigations, study of defects is one of the most important subjects because of the strong influence of these defects on the electrical and optical properties.

作者: J.Y.Ke H.Li J.B.Pang Z.Wang

作者单位: Department of physics,Wuhan University,Wuhan 430072,P.R.China Nuclear Solid Physics Key Laboratory,Wuhan University,Wuhan 430072,P.R.China

会议类型: 国际会议

会议名称: 第九届国际正电子与正电子素国际会议(9th International Workshop on Positron and Positronium Chemistry)(PPC–9)

会议地点: 武汉

会议语种:英文

页码: 92

在线出版日期: 2008-05-11（万方平台首次上网日期，不代表论文的发表时间）