Studies of crystal structure of ZnO thin films under variable ratios between O2 to Ar by a slow positron beam

摘要：

Thin wurtzite (002) textured ZnO films were deposited on glass substrates by radio frequency(RF) magnetron sputtering technique, under variable ratios between O2 and Ar. The crystal structure of films was investigated using by a slow positron beam and X-ray diffraction. The results show that the effective diffusion length of positron decreases with the increase of oxygen in reaction atmosphere and the FWHM of (002) diffraction peak increases. It is proved that the crystal quality of the thin films has been worsened as the oxygen ratio increases. Furthermore, the results suggest that the interplanar spacing increases and the grain size decreases with the increase of oxygen partial pressure, and the best growth orientation (C-axis unique orientation) of ZnO thin films could be obtained as the ratio of O2 to Ar is 0.4.

关键词： ZnO thin films crystallization structure slow positron beam ratio of O2 to Ar

作者: Y.Q.Chen S.J.Wang Y.C.Wu Z.Q.Chen N.Qi C.Q.Chen H.J.Zhang M.J.Wang G.J.Fang

作者单位: Key Lab of Nuclear Solid State Physics of Hubei Province,and Department of Physics,Wuhan University, Key Lab of Acoustic and Photonic Materials and Devices of Ministry of Education,and Department of Ph

会议类型: 国际会议

会议名称: 第九届国际正电子与正电子素国际会议(9th International Workshop on Positron and Positronium Chemistry)(PPC–9)

会议地点: 武汉

会议语种:英文

页码: 94

在线出版日期: 2008-05-11（万方平台首次上网日期，不代表论文的发表时间）