Positron beam study of Co doped ZnO films prepared by PLD

摘要：

Slow positron beam are used to study defect structures in Co doped and undoped ZnO films prepared by Pulsed Laser Deposition (PLD) at 400℃, 600℃, 700℃ on c-plane sapphire. Comparing with ZnO samples, Co doped ZnO samples have larger positron effective diffusion length (Leff), which change in different tendencies depending on the growth temperature. Crystal structures of the samples are investigated by X-ray diffraction (XRD) and wurtzite ZnO could be observed in Co doped samples.

关键词： Co doped ZnO films Slow positron beam Growth temperature

作者: Ren Hongfeng Weng Huimin Ye Bangjiao Han Rongdian Li Hui Gao Chuanbo

作者单位: Department of Modern Physics,University of Science and Technology of China,Hefei,Anhui 230026,China Department of Material Science and Engineering,University of Science and Technology of China,Hefei,A

会议类型: 国际会议

会议名称: 第九届国际正电子与正电子素国际会议(9th International Workshop on Positron and Positronium Chemistry)(PPC–9)

会议地点: 武汉

会议语种:英文

页码: 102-104

在线出版日期: 2008-05-11（万方平台首次上网日期，不代表论文的发表时间）