The behavior of ozygen and defects in Si-based Semiconductor studied by positron annihilation techniques
Slow positron beam and coincidence Doppler broadening techniques have been used to follow temperature-induced defects and structural changes in Cz-Si with an initial oxygen content of 1.1×1018 cm-3. Oxygen is recognized as a peak at about 11.85×10-3m0c on the ratio curves. For Cz-Si annealed at 480 ℃/15h or 600 ℃/15h, the ratio curves show the presence of vacancy-like defects, but they are not associated with oxygen. For Cz-Si annealed at 480 ℃/15h, then followed by a 600 ℃/15h heat treatment, the ratio curves show the signal of O atom. The ratio curves of Cz-Si, thermally treated by a two-step (480℃/15h + 600℃/15h) pre-annealing, followed by a one-step annealing under different hydrostatic argon pressures and annealed temperatures, also show a peak at 11.85×10-3m0c. The height of the peak varies with different samples. Experimental results indicate that the SiO2 film will form on the surface of Cz-Si after the heat treatment.
Ozygen defect Si-based semiconductor positron annihilation
Deng Wen Huang Le Zhu Qi-Tao Wei Ya-Qin Huang Yu-Yang
Department of Physics,Guangxi University,Nanning 530004,P.R.China
国际会议
第九届国际正电子与正电子素国际会议(9th International Workshop on Positron and Positronium Chemistry)(PPC–9)
武汉
英文
131-133
2008-05-11（万方平台首次上网日期，不代表论文的发表时间）