Defects in Electron Irradiation Te-doped GaSb Studied by Positron Lifetime Spectroscopy

摘要：

Defects induced by electron irradiation in Te-doped liquid-encapsulated Czochralski-grown GaSb were studied by the positron lifetime spectroscopy. The lifetime measurements under room temperature indicated there were VGa-related defects with a characteristic lifetime of 298 ps in the heavily Te-doped as-grown GaSb samples. The average lifetime increased with the increase of irradiation dose in lightly Te-doped GaSb,but the behavior was opposite in the heavily Te-doped samples. It should be due to the shift of Fermi level in heavily Te-doped GaSb and the occurrence of gallium vacancies in different charge states. In the temperature dependence measurements carried out on heavily Te-doped samples, we observed positron shallow trap, and this shallow trap should be attributed to positrons forming hyrogenlike Rydberg states with GaSb antisite defects.

关键词： GaSb positron lifetime electron irradiation defect

作者: H.Li J.Y.Ke J.B.Pang B.Wang Z.Wang

作者单位: Department of physics,Wuhan University,Wuhan 430072,P.R.China

会议类型: 国际会议

会议名称: 第九届国际正电子与正电子素国际会议(9th International Workshop on Positron and Positronium Chemistry)(PPC–9)

会议地点: 武汉

会议语种:英文

页码: 140-142

在线出版日期: 2008-05-11（万方平台首次上网日期，不代表论文的发表时间）